Organic light emitting display device

ABSTRACT

An organic light emitting display device has a plurality of first electrodes, intermediate layers, and second electrodes that correspond to a plurality of pixel areas. The first electrodes are spaced from one another, the second electrodes are spaced from one another, and the intermediate layers are spaced from one another. A conductive protection layer is formed over the second electrodes, and a connection electrode layer is formed over the conductive protection layer and electrically connecting the second electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.14/844,321, filed Sep. 3, 2015, the entire contents of which is herebyincorporated by reference.

Korean Patent Application No. 10-2015-0025912, filed on Feb. 24, 2015,and entitled “Organic Light Emitting Display Device and Method OfManufacturing The Same,” is incorporated by reference herein in itsentirety.

BACKGROUND 1. Field

One or more embodiments described herein relate to an organic lightemitting display device and a method of manufacturing an organic lightemitting display device.

2. Description of the Related Art

An organic light emitting display device is lightweight and thin and hasa wide viewing angle, fast response speed, and reduced power consumptioncompared to other types of display devices. In order to realize a fullcolor display, different color pixels may have light resonancestructures with different optical lengths.

SUMMARY

In accordance with one or more embodiments, an organic light emittingdisplay device includes a substrate including a plurality of pixelareas; a plurality of first electrodes corresponding to the pixel areasand separated from each other; a plurality of intermediate layerscorresponding to the pixel areas and separated from each other; aplurality of second electrodes corresponding to the pixel areas andseparated from each other; a conductive protection layer over the secondelectrodes; and a connection electrode layer over the conductiveprotection layer and electrically connecting the second electrodes.

The connection electrode layer may be integrally formed to cover thepixel areas. The second electrodes and the connection electrode layermay include a transflective metal layer. A thickness of the conductiveprotection layer may be greater than a thickness of each of the secondelectrodes and a thickness of the connection electrode layer. Theconductive protection layer may be a translucent layer.

The intermediate layers and the second electrode layers may correspondto the pixel areas have substantially a same pattern. A distance betweenthe second electrode and the connection electrode layer corresponding toat least one of the pixel areas may correspond to an optical resonancedistance of light emitted from the at least one of the pixel areas. Atleast one of a distance between the first electrode and the secondelectrode corresponding to at least one of the pixel areas or a distancebetween the first electrode and the connection electrode layercorresponding to at least one of the pixel areas may correspond to anoptical resonance distance of light emitted from the at least one of thepixel areas.

The pixel areas may include a first pixel area corresponding to firstcolor emission of light and a second pixel area corresponding to asecond color emission of light, and a thickness of the second electrodecorresponding to the first pixel area may be different from a thicknessof the second electrode corresponding to the second pixel area. Theconductive protection layer may be integrally formed with respect to thesecond electrodes. The display device may include a pixel defining layerbetween adjacent ones of the pixel areas, wherein at least part of a topsurface of the pixel defining layer may be in direct contact with theconductive protection layer. The conductive protection layer may have athickness based on an optical resonance distance of light emitted fromone of the pixel areas.

The conductive protection layer may have island-type patternscorresponding to the pixel areas of the substrate. Each of theisland-type patterns may substantially correspond to the island-typepattern of the second electrodes. The display device may include a pixeldefining layer between adjacent ones of the pixel areas, wherein atleast part of a top surface of the pixel defining layer may be in directcontact with the connection electrode layer.

The pixel areas may include a first pixel area corresponding to a firstcolor emission of light and a second pixel area corresponding to asecond color emission of light, and a thickness of the conductiveprotection layer corresponding to the first pixel area may be differentfrom a thickness of the conductive protection layer corresponding to thesecond pixel area. The first electrodes may be anodes and the secondelectrodes may be cathodes. The display device may include a protectionlayer on the connection electrode layer. Each of the intermediate layersmay include a first intermediate layer adjacent to the first electrodeand an emission layer on the first intermediate layer. The firstintermediate layer may include a hole transport layer.

In accordance with one or more other embodiments, a method is providedfor manufacturing an organic light emitting display device, the methodincluding preparing a substrate including a plurality of pixel areas;patterning first electrodes which are separated from each other andwhich correspond to the pixel areas of the substrate; formingintermediate layers and second electrodes, each of the intermediatelayers and the second electrodes having island-type pattern to beseparated from each other in correspondence to the plurality of pixelareas of the substrate; forming a conductive protection layer coveringthe second electrodes; and forming a connection electrode layer on theconductive protection layer, integrally formed with the pixel areas, andelectrically connecting the second electrodes.

The second electrodes and the connection electrode layer may include atransflective metal layer. A thickness of the conductive protectionlayer may be greater than a thickness of each of the second electrodesand a thickness of the connection electrode layer. The conductiveprotection layer may be a translucent layer.

Forming the intermediate layers and the second electrodes may includeforming a masking pattern, on the substrate, with an opening exposing afirst electrode corresponding to a first pixel area, the first pixelarea corresponding to a first color emission of light; forming anintermediate layer on an surface of the substrate including the maskingpattern; forming the second electrodes on the intermediate layer; andremoving the masking pattern such that the intermediate layers and thesecond electrodes in the island-type pattern remain in correspondence tothe first pixel area.

The conductive protection layer may be formed so that part of theconductive protection layer corresponding to a first pixel area forperforming a first color emission of light has a thickness based on anoptical resonance distance of the light emitted from the first pixelarea. The conductive protection layer may be integrally formed withrespect to the second electrodes. The conductive protection layer mayhave an island-type pattern substantially corresponding to theisland-type pattern of each of the second electrodes.

The first electrodes may be anodes and the second electrodes may becathodes. Each of the intermediate layers may include a firstintermediate layer adjacent to the first electrode and an emission layeron the first intermediate layer. The first intermediate layer mayinclude a hole transport layer. The method may include forming aprotection layer on the connection electrode layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates an embodiment of an organic light emitting displaydevice;

FIG. 2 illustrates a view along section line II-II in FIG. 1;

FIGS. 3 through 13 illustrate different stages of an embodiment of amethod for manufacturing an organic light emitting display device;

FIG. 14 illustrates another embodiment of an organic light emittingdisplay;

FIG. 15 illustrates another embodiment of an organic light emittingdisplay;

FIGS. 16 through 22 illustrate different stages in an embodiment of amethod for manufacturing the organic light emitting display device inFIG. 15; and

FIG. 23 illustrates another embodiment of an organic light emittingdisplay.

DETAILED DESCRIPTION

Example embodiments are described more fully hereinafter with referenceto the accompanying drawings; however, they may be embodied in differentforms and should not be construed as limited to the embodiments setforth herein. Rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully conveyexemplary implementations to those skilled in the art. The embodimentsmay be combined to form additional embodiments.

It will also be understood that when a layer or element is referred toas being “on” another layer or substrate, it can be directly on theother layer or substrate, or intervening layers may also be present.Further, it will be understood that when a layer is referred to as being“under” another layer, it can be directly under, and one or moreintervening layers may also be present. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers may also be present. Like reference numerals refer tolike elements throughout.

FIG. 1 illustrates an embodiment of an organic light emitting displaydevice which includes a plurality of pixel areas P1, P2, and P3. Thepixel areas P1, P2, and P3 may be arranged to form a matrix and emitlight of different colors. For example, the pixel areas P1, P2, and P3may emit blue, green, and red light, respectively. For convenience ofdescription, an example in which the first pixel area P1 emits bluelight, the second pixel area P2 emits green light, and the third pixelarea P3 emits red light will be described below. (In another embodiment,as long as a full color display is realized, the display device may emita different combination of colors. Also, another embodiment may have adifferent number of pixel areas, e.g., may include a combination of fourpixels that emit blue, green, red, and white light.)

A patterned stack structure 200 is in each of the pixel areas P1, P2,and P3. The stack structure 200 may include a first electrode 210, anintermediate layer 220, and a second electrode 230, see, e.g., FIG. 2.The second electrodes 230 of the stack structures 200 are electricallyconnected via a connection electrode layer 250, and a conductiveprotection layer 240 having a predetermined thickness is between thestack structure 200 and the connection electrode layer 250.

The pixel areas P1, P2, and P3 are arranged to form the matrix asillustrated, for example, in FIG. 1. According to another exemplaryembodiment, the pixel areas P1, P2, and P3 may be arranged to havevarious other shapes, e.g., a pentile shape.

FIG. 2 illustrates a cross-sectional view taken along a line II-II ofFIG. 1. Referring to FIG. 2, a pixel circuit PC is formed on a substrate100, and an insulating layer 150 is positioned on the pixel circuit PC.The substrate 100 may include, for example, a glass material, a metalmaterial, or a plastic material such as polyethylene terephthalate(PET), polyethylene naphthalate (PEN), or polyimide. According to oneembodiment, the substrate 100 may have improved flexibility when thesubstrate 100 is formed of plastic material or metal material, than whenthe substrate 100 is formed of glass material. A buffer layer formed,for example, of SiO₂ and/or SiNx may be on the substrate 100 to preventimpurities from penetrating into the substrate 100.

The pixel circuit PC includes a thin-film transistor (TFT) and acapacitor, and may be electrically connected to the first electrode 210on each of the pixel areas P1, P2, and P3. A top surface of the pixelcircuit PC may be covered by the insulating layer 150 that isapproximately flat.

The first electrode 210 is in each of the pixel areas P1, P2, and P3.The first electrode 210 is patterned in an island type corresponding toeach of the pixel areas P1, P2, and P3. The first electrode 210 is ananode electrode serving as a reflective electrode. The first electrode210 may be a single reflective metal layer including, for example,silver (Ag), aluminum (Al), gold (Au), platinum (Pt), chrome (Cr), or analloy containing these. According to one embodiment, the first electrode210 may be a double or triple layer further including, for example, anindium tin oxide (ITO) or an indium zinc oxide (IZO) on a top portionand/or a bottom portion of the above-described single reflective metallayer.

A pixel defining layer 180 includes openings OP corresponding to thepixel areas P 1, P2, and P3. A top surface of the first electrode 210 isexposed through the openings OP of the pixel defining layer 180. An edgeof the first electrode 210 may be covered by the pixel defining layer180. The pixel defining layer 180 may include an organic insulatinglayer formed of acryl resin. The pixel defining layer 180 may increase adistance between an end portion of the first electrode 210 and thesecond electrode 230 and/or the end portion of the first electrode 210and the connection electrode layer 250, thereby acting to prevent an arcor the like from being generated in the end portion of the firstelectrode 210.

The intermediate layer 220 is formed in each of the pixel areas P1, P2,and P3. The intermediate layer 220 may be patterned as an island type ineach of the pixel areas P1, P2, and P3, and may include a firstintermediate layer 221, emission layers 222B, 222G, and 222R, and asecond intermediate layer 223, which are sequentially stacked.

The first intermediate layer 221 may be adjacent to the first electrode210 and may have a single layer or multilayer structure. For example,when the first intermediate layer 221 includes a high molecular weightmaterial, the first intermediate layer 221 may be a hole transport layer(HTL) having a single layer structure and, for example, may includepoly-(3,4)-ethylene-dihydroxy thiophene (PEDOT) or polyaniline (PANI).When the first intermediate layer 221 includes a low molecular weightmaterial, the first intermediate layer 221 may include a hole injectionlayer (HIL) and the HTL.

The emission layer 222B of the first pixel area P1 may correspond to ablue color emission of light and is patterned as an island typecorresponding to the first pixel area P1. According to one embodiment,the emission layer 222B of the first pixel area P1 may include afluorescent material selected from the group consisting of DPVBi,spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), aPFO-based polymer, and a PPV-based polymer. According to anotherembodiment, the emission layer 222B may include, as a host material, ananthracene derivative or a carbazole-based compound, and may include, asa dopant material, a phosphor material including F2Irpic,(F2ppy)2Ir(tmd), or Ir(dfppz)3.

The emission layer 222G of the second pixel area P2 may correspond to agreen color emission of light and is patterned as an island typecorresponding to the second pixel area P2. According to one embodiment,the emission layer 222G of the second pixel area P2 may include, as thehost material, the anthracene derivative or the carbazole-basedcompound, and may include, as the dopant material, a phosphor materialincluding Ir(ppy)3 (fac tris(2-phenylpyridine) iridium). According toanother embodiment, the emission layer 222G may include a fluorescentmaterial such as tris(8-hydroxyquinoline) aluminum (Alq3).

The emission layer 222R of the third pixel area P3 may correspond to ared color emission of light and is patterned as an island typecorresponding to the third pixel area P3. According to one embodiment,the emission layer 222R of the third pixel area P3 may include, as thehost material, the anthracene derivative or the carbazole-basedcompound, and may include, as the dopant material, a phosphor materialincluding one or more materials selected from the group consisting ofPIQIr(acac)(bis(1-phenylisoquinoline)acetylacetonate iridium),PQIr(acac(bis(1-phenylquinoline)acetylacetonate iridium),PQIr(tris(1-phenylquinoline) iridium), and PtPEP(octaethylporphyrinplatinum). According to another embodiment, the emission layer 222R mayinclude a fluorescent material such as PED:Eu(DBM)3(Phen) or perylene.

The second intermediate layer 223 is patterned corresponding to each ofthe emission layers 222B, 222G, and 222R to cover each of the emissionlayers 222B, 222G, and 222R. The second intermediate layer 223 may beomitted in an alternative embodiment. For example, when the firstintermediate layer 221 and the emission layers 222B, 222G, and 222Rinclude high molecular weight material, the second intermediate layer223 may be omitted. When the first intermediate layer 221 and theemission layers 222B, 222G, and 222R include low molecular weightmaterial, the second intermediate layer 223 may be formed in order toachieve an excellent light-emitting characteristic. In this case, thesecond intermediate layer 223 may have a single layer or multilayerstructure and may include an electron transport layer (ETL) and/or anelectron injection layer (EIL).

The second electrode 230 is formed in each of the pixel areas P1, P2,and P3. The second electrode 230 is positioned on the intermediate layer220 and is patterned as an island type corresponding to each of thepixel areas P1, P2, and P3. The second electrode 230 is a cathodeelectrode with simultaneous translucency and reflectivity. For example,the second electrode 230 may include a transflective metal layer. Thesecond electrode 230 may transmit or reflect part of light emitted fromthe emission layers 222B, 222G, and 222R by appropriately adjusting athickness of the transflective metal layer. According to one exemplaryembodiment, the second electrode 230 may form a micro-cavity structurewith the first electrode 210 and/or the connection electrode layer 250,to thereby improve light efficiency of an organic light emitting displaydevice.

According to an embodiment, the second electrode 230 may include, forexample, Ag and Mg. For example, the second electrode 230 may be formedof an Ag—Mg alloy in which an amount of Ag is higher than an amount ofMg. According to another embodiment, the second electrode 230 mayinclude any one selected from magnesium (Mg), silver (Ag), lithium (Li),sodium (Na), calcium (Ca), strontium (Sr), and an alloy of theses.

The conductive protection layer 240 may be on the second electrode 230.The conductive protection layer 240 electrically connects the secondelectrode 230 patterned in each of the pixel areas P1, P2, and P3 to theconnection electrode layer 250, and has translucency such that lightemitted from the emission layers 222B, 222G, and 222R may be emitted tothe outside. The conductive protection layer 240 may include, forexample, an oxide such as ITO, IZO, WOx, MoOx, and InOx or a conductivepolymer such as PEDOT, and may be formed as a single layer or amultilayer.

The conductive protection layer 240 may be integrally formed to coverthe second electrode 230 of each of the pixel areas P1, P2, and P3. Theconductive protection layer 240 may cover a display area. The displayarea correspond, for example, to all areas in which the organic lightemitting display device may emit light, e.g., all areas except for anedge of the organic light emitting display device in which a controlleris disposed. When a dead area is not present in an entire surface of theorganic light emitting display device, the entire surface of the organiclight emitting display device may be the display area.

The connection electrode layer 250 may be integrally formed with respectto the pixel areas P1, P2, and P3 to cover the display area, andelectrically connects the second electrodes 230 patterned as an islandtype corresponding to pixel areas P1, P2, and P3.

The connection electrode layer 250 may be simultaneously translucent andreflective. For example, the connection electrode layer 250 may includethe transflective metal layer. The connection electrode layer 250 maytransmit or reflect part of light emitted from the emission layers 222B,222G, and 222R by appropriately adjusting a thickness of thetransflective metal layer. The connection electrode layer 250 may formthe micro-cavity structure with the first electrode 210 and/or thesecond electrode 230, thereby improving light efficiency of the organiclight emitting display device.

According to an embodiment, the connection electrode layer 250 mayinclude, for example, Ag and Mg. For example, the connection electrodelayer 250 may include an Ag—Mg alloy in which an amount of Ag is higherthan an amount of Mg. According to another embodiment, the connectionelectrode layer 250 may include any one selected from magnesium (Mg),silver (Ag), lithium (Li), sodium (Na), calcium (Ca), strontium (Sr),and an alloy of these.

The intermediate layer 220 and the second electrode 230 are patterned asan island type corresponding to each of the pixel areas P1, P2, and P3,whereas the conductive protection layer 240 and the connection electrodelayer 250 are integrally formed with respect to the pixel areas P1, P2,and P3. Thus, part of the top surface of the pixel defining layer 180between or among the pixel areas P1, P2, and P3 may be in direct contactwith the conductive protection layer 240.

At least one of the pixel areas P1, P2, and P3 may have an opticalresonance structure, e.g., a micro-cavity.

According to an embodiment, one of the pixel areas P1, P2, and P3 mayhave a first optical resonance distance between the second electrode 230and the connection electrode layer 250, e.g., from the second electrode230 to the connection electrode layer 250. For example, the conductiveprotection layer 240 may have a thickness corresponding to an opticalresonance distance of light realized in one of the pixel areas P1, P2,and P3, for example, in the first pixel area P1.

The intermediate layer 220 and the second electrode 230 may beindependently patterned in each of the pixel areas P1, P2, and P3 duringmanufacture. Thus, a thickness of the intermediate layer 220 and athickness of the second electrode 230 of each of the pixel areas P1, P2,and P3 may be independently selected, e.g., the thicknesses may havedifferent values.

Each of the pixel areas P1, P2, and P3 may have a second opticalresonance distance from the first electrode 210 to the second electrode230 and/or a third optical resonance distance from the first electrode210 to the connection electrode layer 250, by adjusting the thicknessesof the intermediate layer 220 and/or the second electrode 230.

The thicknesses of the second electrode layer 230 and the connectionelectrode layer 250 may have values smaller than that of the conductiveprotection layer 240. For example, the thickness of the conductiveprotection layer 240 may be greater than those of the second electrode230 and the connection electrode layer 250. When the thicknesses of thesecond electrode 230 and the connection electrode layer 250 that areformed of metal are large (e.g., greater than one or more correspondingpredetermined value), in particular, when the thickness of theconnection electrode layer 250 integrally formed with respect to thepixel areas P 1, P2, and P3 is large, the resistance of the connectionelectrode layer 250 may be reduced, translucency may be reduced, andthus light efficiency of the organic light emitting display device maydeteriorate. However, according to an embodiment, the thickness of theconductive protection layer 240 is relatively thick and the thicknessesof the second electrode 230 and the connection electrode layer 250 arerelatively thin, thereby improving translucency while reducingresistance.

FIGS. 3 to 13 illustrate cross-sectional views of different stages of anembodiment of a method for manufacturing an organic light emittingdisplay device, for example, the one in FIG. 2.

Referring to FIG. 3, the substrate 100 including the pixel areas P1, P2,and P3 is prepared. A buffer layer is disposed on the substrate 100 toprevent impurities from penetrating into the substrate 100. The pixelcircuit PC including a TFT and a capacitor is formed on the bufferlayer. The pixel circuit PC is formed in each of the pixel areas P1, P2,and P3 and may have a top surface covered by the insulating layer 150that is approximately flat.

Thereafter, the first electrode 210 is formed in each of the pixel areasP1, P2, and P3 by forming and patterning a metal layer on the insulatinglayer 150. The first electrode 210 is patterned as an island typecorresponding to each of the pixel areas P1, P2, and P3. The firstelectrode 210 is a reflective electrode. According to an embodiment, thefirst electrode 210 may be a single reflective metal layer includingsilver (Ag), aluminum (Al), gold (Au), platinum (Pt), chromium (Cr), oran alloy containing these. According to another embodiment, the firstelectrode 210 may be formed as a double or triple layer furtherincluding an ITO or an IZO on a top portion and/or a bottom portion ofthe above-described single reflective metal layer.

The pixel defining layer 180 is formed by forming and patterning anorganic insulating layer on the substrate 100 on which the firstelectrode 210 is formed. The pixel defining layer 180 includes theopenings OP that exposes at least a part of a top surface of the firstelectrode 210.

Referring to FIG. 4, a first masking pattern M1 is formed to cover thepixels units P2 and P3 except for the first pixel area P1. The firstmasking patterns M1 may include a polymer material. The type of materialof the first masking patterns M1 may be different in another embodiment,as long as the material may be well resolved in a solvent during alift-off process that will be described later and may reduce or minimizean influence on the intermediate layer 220.

Referring to FIG. 5, the intermediate layer 220 and the second electrode230 are sequentially formed on the substrate 100 on which the firstmasking pattern M1 is provided. The intermediate layer 220 may includethe first intermediate layer 221, the emission layer 222B realizing ablue color, and the second intermediate layer 223.

The first intermediate layer 221 may be a HTL having a single layerstructure. According to another embodiment, the first intermediate layer221 may include a HIL adjacent to the first electrode 210 and the HTLpositioned on the HIL.

The emission layer 222B may include, as a material corresponding to bluecolor emission of light, a fluorescent material including a materialselected from the group consisting of DPVBi, spiro-DPVBi, spiro-6P,distyrylbenzene (DSB), distyrylarylene (DSA), a PFO-based polymer, and aPPV-based polymer. According to another embodiment, the emission layer222B may include, as a host material, an anthracene derivative or acarbazole-based compound, and may include, as a dopant material, aphosphor material including F2Irpic, (F2ppy)2Ir(tmd), or Ir(dfppz)3.

The second intermediate layer 223 may include an ETL and/or an EIL. Whenthe first intermediate layer 221 and the emission layer 222B include apolymer material, the second intermediate layer 223 may be omitted.

The second electrode 230 may serve as a transflective metal layer.According to one embodiment, the second electrode 230 may include, forexample, Ag and Mg. For example, the second electrode 230 may include anAg—Mg alloy in which an amount of Ag is higher than an amount of Mg.According to another embodiment, the second electrode 230 may includeany one selected from magnesium (Mg), silver (Ag), lithium (Li), sodium(Na), calcium (Ca), strontium (Sr), and an alloy of these.

According to an embodiment, the thickness of the first masking patternM1 may be greater than a sum of thicknesses of the intermediate layer220 and the second electrode 230. Thus, the intermediate layer 220 andthe second electrode 230 on the first pixel area P1 may bediscontinuously formed with the intermediate layer 220 and the secondelectrode 230 on the first masking pattern M1.

Referring to FIG. 6, the first masking pattern M1 is removed through thelift-off process. When the first masking pattern M1 is removed, theintermediate layer 220 and the second electrode 230 that are patternedas an island type remain on the first pixel area P1.

Referring to FIG. 7, a second masking pattern M2 is formed to cover thepixels units P1 and P3 except for the second pixel area P2. The secondmasking pattern M2 may include a polymer material. However, the type ofmaterial of the second masking pattern M2 may be different in anotherembodiment, as long as the material may be well resolved in the solventduring the lift-off process that will be described later and may reduceor minimize an influence on the intermediate layer 220.

Referring to FIG. 8, the intermediate layer 220 and the second electrode230 are sequentially formed on the substrate 100 on which the secondmasking pattern M2 is provided. The intermediate layer 220 may includethe first intermediate layer 221, the emission layer 222G realizing agreen color, and the second intermediate layer 223.

The first intermediate layer 221 may be formed as the HTL having thesingle layer structure. According to another embodiment, the firstintermediate layer 221 may include the HIL adjacent to the firstelectrode 210 and the HTL positioned on the HIL. The second intermediatelayer 223 may include or omit the ETL and/or the EIL.

The emission layer 222G may include, as a host material, an anthracenederivative or a carbazole-based compound, and may include, as a dopantmaterial, a phosphor material including Ir(ppy)3 (factris(2-phenylpyridine) iridium). According to another embodiment, theemission layer 222G may include a fluorescent material such astris(8-hydroxyquinoline) aluminum (Alq3).

The second electrode 230 may be formed as the transflective metal layer.According to one embodiment, the second electrode 230 may include, forexample, Ag and Mg. For example, the second electrode 230 may include anAg—Mg alloy in which an amount of Ag is higher than an amount of Mg.According to another embodiment, the second electrode 230 may includeany one selected from magnesium (Mg), silver (Ag), lithium (Li), sodium(Na), calcium (Ca), strontium (Sr), and an alloy of these.

According to an embodiment, the thickness of the second masking patternM2 may be greater than the sum of thicknesses of the intermediate layer220 and the second electrode 230. Thus, the intermediate layer 220 andthe second electrode 230 on the second pixel area P2 may bediscontinuously formed with the intermediate layer 220 and the secondelectrode 230 on the second masking pattern M2.

Referring to FIG. 9, the second masking pattern M2 may be removedthrough a lift-off process. When the second masking pattern M2 isremoved, the intermediate layer 220 and the second electrode 230 thatare patterned as an island type remain on the second pixel area P2.

Referring to FIG. 10, a third masking pattern M3 is formed to cover thepixels units P 1 and P2 except for the third pixel area P3. The thirdmasking pattern M3 may include a polymer material. However, the type ofa material of the second masking pattern M2 may be different in anotherembodiment, as long as the material may be well resolved in the solventduring the lift-off process that will be described later and may reduceor minimize an influence on the intermediate layer 220.

Referring to FIG. 11, the intermediate layer 220 and the secondelectrode 230 are sequentially formed on the substrate 100 on which thethird masking pattern M3 is provided. The intermediate layer 220 mayinclude the first intermediate layer 221, the emission layer 222Rrealizing a red color, and the second intermediate layer 223.

The first intermediate layer 221 may be formed as the HTL having thesingle layer structure. According to another embodiment, the firstintermediate layer 221 may include the HIL adjacent to the firstelectrode 210 and the HTL positioned on the HIL. The second intermediatelayer 223 may include or omit the ETL and/or the EIL.

The emission layer 222R may include, as the host material, theanthracene derivative or the carbazole-based compound, and may include,as a dopant material, a phosphor material including one or morematerials selected from the group consisting ofPIQIr(acac)(bis(1-phenylisoquinoline)acetylacetonate iridium),PQIr(acac(bis(1-phenylquinoline)acetylacetonate iridium),PQIr(tris(1-phenylquinoline) iridium), and PtPEP(octaethylporphyrinplatinum). According to another embodiment, the emission layer 222R mayinclude a fluorescent material such as PED:Eu(DBM)3(Phen) or perylene.

The second electrode 230 may be formed as the transflective metal layer.According to some embodiments, the second electrode 230 may include, forexample, Ag and Mg. For example, the second electrode 230 may include anAg—Mg alloy in which an amount of Ag is higher than an amount of Mg.According to another embodiment, the second electrode 230 may includeany one selected from magnesium (Mg), silver (Ag), lithium (Li), sodium(Na), calcium (Ca), strontium (Sr), and an alloy of these.

According to an embodiment, the thickness of the third masking patternM3 may be greater than the sum of thicknesses of the intermediate layer220 and the second electrode 230. Thus, the intermediate layer 220 andthe second electrode 230 formed on the third pixel area P3 may bediscontinuously formed with the intermediate layer 220 and the secondelectrode 230 formed on the third masking pattern M3.

Referring to FIG. 12, the third masking pattern M3 is removed throughthe lift-off process. When the third masking pattern M3 is removed, theintermediate layer 220 and the second electrode 230 that are patternedas an island type remain on the third pixel area P3.

Referring to FIG. 13, the conductive protection layer 240 and theconnection electrode layer 250 that are integrally formed to cover thepixel areas P1, P2, and P3 are formed on the intermediate layer 220 andthe second electrode 230 that are patterned as an island type in each ofthe pixel areas P1, P2, and P3.

The conductive protection layer 240 includes a translucent material suchthat light emitted from the emission layers 222B, 222G, and 222R maytravel. For example, the conductive protection layer 240 may include anoxide such as ITO, IZO, WOx, MoOx, and InOx or a conductive polymer suchas PEDOT.

The connection electrode layer 250 may be formed as the transflectivemetal layer. According to one embodiment, the connection electrode layer250 may include, for example, Ag and Mg. For example, the connectionelectrode layer 250 may include, for example, an Ag—Mg alloy in which anamount of Ag is higher than an amount of Mg. According to anotherembodiment, the connection electrode layer 250 may include any oneselected from magnesium (Mg), silver (Ag), lithium (Li), sodium (Na),calcium (Ca), strontium (Sr), and an alloy of these.

Thicknesses of the second electrode 230 and the connection electrodelayer 250 may be smaller than that of the conductive protection layer240.

The conductive protection layer 240 may have a thickness correspondingto an optical resonance distance of one of the one of the pixel areasP1, P2, and P3. According to one embodiment, the conductive protectionlayer 240 may have a thickness corresponding to an optical resonancedistance of blue light, and thus a micro-cavity may be formed betweenthe second electrode 230 and the connection electrode layer 250 of thefirst pixel area P1.

As described with reference to FIGS. 4 to 12, the intermediate layer 220and the second electrode 230 of each of the pixel areas P 1, P2, and P3are formed through separate processes. Thus, the thicknesses of theintermediate layer 220 and the second electrode 230 of each of the pixelareas P1, P2, and P3 may be independently formed. The thicknesses of theintermediate layer 220 and/or the second electrode 230 are differentlyformed in each of the pixel areas P1, P2, and P3. Thus, an opticalresonance distance corresponding to a color that is to be realized in acorresponding pixel area may be formed in each of the pixel areas P1,P2, and P3.

According to one non-limiting embodiment, the first pixel area P1realizing a blue color having relatively low efficiency may have a firstoptical resonance distance between the second electrode 230 and theconnection electrode layer 250 by controlling a thickness of theconductive protection layer 240, and may have second and third opticalresonance distances respectively formed between the first electrode 210and the second electrode 230 and between the first electrode 210 and theconnection electrode layer 250 by controlling thicknesses of theintermediate layer 220 and/or the second electrode layer 230. The secondand third pixel areas P2 and P3 may have optical resonance distancesrespectively between the first electrode 210 and the second electrode230 and between the first electrode 210 and the connection electrodelayer 250 by controlling the thicknesses of the intermediate layer 220and/or the second electrode layer 230 of each of the second and thirdpixel areas P2 and P3.

FIG. 14 illustrates a cross-sectional view of another embodiment of anorganic light emitting display device. Referring to FIG. 14, the organiclight emitting display device may include a protection layer 260 on theconnection electrode layer 250. When the connection electrode layer 250formed as a transfiective metal layer is exposed to oxygen during amanufacturing process of the organic light emitting display device, itstranslucency may deteriorate since the connection electrode layer 250 isoxidized. To prevent this, the organic light emitting display device mayinclude protection layer 260 that may include an organic material and/oran inorganic material having translucency.

FIG. 15 illustrates a cross-sectional view of another embodiment of anorganic light emitting display device. Referring to FIG. 15, aconductive protection layer 240′ may be patterned as an island typecorresponding to each of the pixel areas P1, P2, and P3. The conductiveprotection layer 240′ may be patterned together with the intermediatelayer 220 and the second electrode 230, so that the intermediate layer220, the second electrode 230, and the conductive protection layer 240′may have substantially a same pattern. Thus, a stack structure 200′including the first electrode 210, the intermediate layer 220, thesecond electrode 230, and the conductive protection layer 240′ ispositioned in each of the pixel areas P1, P2, and P3.

The intermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′ are patterned as the island type corresponding toeach of the pixel areas P1, P2, and P3. The connection electrode layer250 is integrally formed with respect to the pixel areas P1, P2, and P3.Thus, part of a top surface of the pixel defining layer 180 between oramong the pixel areas P1, P2, and P3 may be in direct contact with theconnection electrode layer 250.

In the organic light emitting display device described with reference toFIG. 2, the conductive protection layer 240 is integrally formed withrespect to the pixel areas P1, P2, and P3. Thus, a first opticalresonance distance formed between the second electrode 230 and theconnection electrode layer 250 by adjusting a thickness of theconductive protection layer 240 may be determined in consideration of tolight to be emitted from one of the pixel areas P1, P2, and P3.

However, in accordance with one or more embodiments of the organic lightemitting display device, the conductive protection layer 240′ ispatterned in each of the pixel areas P1, P2, and P3. Thus, a thicknessof the conductive protection layer 240′ may be independently controlledin each of the pixel areas P1, P2, and P3. Thus, each of the pixel areasP1, P2, and P3 may set an optical resonance distance from the secondelectrode 230 to the connection electrode layer 250 by adjusting thethickness of the conductive protection layer 240′ patterned incorrespondence to a corresponding pixel.

FIGS. 16 to 22 illustrate cross-sectional views of different stages ofan embodiment of a method for manufacturing the organic light emittingdisplay device of FIG. 15.

Referring to FIG. 16, the first masking pattern M1 is formed on thesubstrate 100 in which the pixel circuit PC and the first electrode 210are formed. The first masking pattern M1 covers the pixel areas P2 andP3 except for the first pixel area P1.

The intermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′ are sequentially formed on the substrate 100 onwhich the first masking pattern M1 is formed. The intermediate layer 220may include the first intermediate layer 221, the emission layer 222Bemitting blue color light, and the second intermediate layer 223. Thedetailed configuration of the intermediate layer 220, the secondelectrode 230, and the conductive protection layer 240′ may be the sameas described above.

According to an embodiment, the thickness of the first masking patternM1 may be greater than a sum of thicknesses of the intermediate layer220, the second electrode 230, and the conductive protection layer 240′.Thus, the intermediate layer 220, the second electrode 230, and theconductive protection layer 240′ on the first pixel area P1 may bediscontinuously formed with the intermediate layer 220, the secondelectrode 230, and the conductive protection layer 240′ formed on thefirst masking pattern M1.

Referring to FIG. 17, the first masking pattern M1 is removed through alift-off process. When the first masking pattern M1 is removed, theintermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′ that are patterned as an island type remain on thefirst pixel area P1.

Referring to FIG. 18, the second masking pattern M2 is formed to coverthe pixel areas P1 and P3 except for the second pixel area P2.Thereafter, the intermediate layer 220, the second electrode 230, andthe conductive protection layer 240′ are sequentially formed on thesubstrate 100 on which the second masking pattern M2 is formed. Theintermediate layer 220 may include the first intermediate layer 221, theemission layer 222G realizing a green color, and the second intermediatelayer 223. The detailed configuration of the intermediate layer 220, thesecond electrode 230, and the conductive protection layer 240′ may bethe same as described above.

According to an embodiment, the thickness of the second masking patternM2 may be greater than a sum of thicknesses of the intermediate layer220, the second electrode 230, and the conductive protection layer 240′.Thus, the intermediate layer 220, the second electrode 230, and theconductive protection layer 240′ on the second pixel area P2 may bediscontinuously formed with the intermediate layer 220, the secondelectrode 230, and the conductive protection layer 240′ formed on thesecond masking pattern M2.

Referring to FIG. 19, the second masking pattern M2 is removed throughthe lift-off process. When the second masking pattern M2 is removed, theintermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′ that are patterned as an island type remain on thesecond pixel area P2.

Referring to FIG. 20, the third masking pattern M3 is formed to coverthe pixel areas P 1 and P2 except for the third pixel area P3.Thereafter, the intermediate layer 220, the second electrode 230, andthe conductive protection layer 240′ are sequentially formed on thesubstrate 100 on which the third masking pattern M3 is formed. Theintermediate layer 220 may include the first intermediate layer 221, theemission layer 222R realizing a red color, and the second intermediatelayer 223. The detailed configuration of the intermediate layer 220, thesecond electrode 230, and the conductive protection layer 240′ may bethe same as described above.

According to an embodiment, the thickness of the third masking patternM3 may be greater than a sum of thicknesses of the intermediate layer220, the second electrode 230, and the conductive protection layer 240′.Thus, the intermediate layer 220, the second electrode 230, and theconductive protection layer 240′ on the third pixel area P3 may bediscontinuously formed with the intermediate layer 220, the secondelectrode 230, and the conductive protection layer 240′ formed on thethird masking pattern M3.

Referring to FIG. 21, the third masking pattern M3 is removed throughthe lift-off process. When the third masking pattern M3 is removed, theintermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′ that are patterned in the island type remain onthe third pixel area P3.

According to the processes described with reference to FIGS. 16 to 21,the second electrode 230 is patterned while the conductive protectionlayer 240′ is formed thereon, thereby effectively preventingdeterioration of transmittance, since the second electrode 230 formed asa transflective metal layer is exposed to oxygen and is oxidized duringa process of performing lift-off or other processes.

The organic light emitting display device according to the presentembodiment may individually set various resonance distances in each ofthe pixel areas P1, P2, and P3 since the intermediate layer 220, thesecond electrode 230, and the conductive protection layer 240′ arepatterned in each of the pixel areas P1, P2, and P3. For example, eachof the pixel areas P1, P2, and P3 may independently set thicknesses ofthe intermediate layer 220, the second electrode 230, and the conductiveprotection layer 240′. For example, each of the pixel areas P1, P2, andP3 may include at least one of a first optical resonance distance fromthe second electrode 230 to the connection electrode layer 250, a secondoptical resonance distance from the first electrode 210 to the secondelectrode 230, and a third optical resonance distance from the firstelectrode 210 to the connection electrode layer 250.

FIG. 23 illustrates a cross-sectional view of another embodiment of anorganic light emitting display device. Referring to FIG. 23, the organiclight emitting display device may include the protection layer 260formed on the connection electrode layer 250. When the connectionelectrode layer 250 formed as a transflective metal layer is exposed tooxygen during a manufacturing process of the organic light emittingdisplay device, its translucency may deteriorate since the connectionelectrode layer 250 is oxidized. To prevent this, the organic lightemitting display device may include the protection layer 260 thatincludes an organic material and/or an inorganic material havingtranslucency.

As described above, according to the organic light emitting displaydevice and the method of manufacturing the organic light emittingdisplay device of the one or more of the above exemplary embodiments,light efficiency may be improved.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of skill in the art as of thefiling of the present application, features, characteristics, and/orelements described in connection with a particular embodiment may beused singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwiseindicated. Accordingly, it will be understood by those of skill in theart that various changes in form and details may be made withoutdeparting from the spirit and scope of the invention as set forth in thefollowing claims.

1.-32. (canceled)
 33. A light emitting display device, comprising: asubstrate including a first pixel area and a second pixel area which areadjacent to each other; a first stacked layer in the first pixel area,the first stacked layer including a first electrode, an intermediatelayer, a second electrode, and a conductive protection layer which aresequentially stacked; a second stacked layer in the second pixel area,the second stacked layer including a first electrode, an intermediatelayer, a second electrode, and a conductive protection layer which aresequentially stacked; and a pixel defining layer on the first electrodesof the first and second pixel areas, wherein the pixel defining layerincludes: a first opening overlapping the first electrode of the firststacked layer; a second opening overlapping the first electrode of thesecond stacked layer; and a portion between the first opening and thesecond opening, the portion being configured to cover an edge of each ofthe first electrodes, wherein an edge of each of the second electrodesis located over an upper surface of the portion.
 34. The light emittingdisplay device as claimed in claim 33, wherein an edge of each of theconductive protection layers is located over the upper surface of theportion.
 35. The light emitting display device as claimed in claim 33,further comprising: a connection electrode layer electrically couplingthe second electrode of the first stacked layer to the second electrodeof the first stacked layer.
 36. The light emitting display device asclaimed in claim 35, wherein the conductive protection layer of thefirst stacked layer contacts each of the connection electrode layer andthe second electrode of the first stacked layer, and wherein theconductive protection layer of the second stacked layer is contacts eachof the connection electrode layer and the second electrode of the secondstacked layer.
 37. The light emitting display device as claimed in claim33, wherein a first distance between the first electrode of the firststacked layer and the second electrode of the first stacked layer isdifferent from a second distance between the first electrode of thesecond stacked layer and the second electrode of the second stackedlayer.
 38. The light emitting display device as claimed in claim 37,wherein at least one of the first distance or the second distancecorresponds to an optical resonance distance of a light emitted from atleast one of the first stacked layer or the second stacked layer,respectively.
 39. The light emitting display device as claimed in claim33, wherein the first stacked layer further includes a firstsub-intermediate layer between the first electrode and the intermediatelayer.
 40. The light emitting display device as claimed in claim 39,wherein the first sub-intermediate layer includes at least one of a holeinjection layer or a hole transport layer.
 41. The light emittingdisplay device as claimed in claim 39, wherein the firstsub-intermediate layer includes at least one of a hole injection layeror a hole transport layer.
 42. The light emitting display device asclaimed in claim 33, wherein the first stacked layer further includes asecond sub-intermediate layer between the intermediate layer and thesecond electrode.
 43. The light emitting display device as claimed inclaim 33, wherein the second stacked layer further includes a firstsub-intermediate layer between the first electrode and the intermediatelayer.
 44. The light emitting display device as claimed in claim 33,wherein the second stacked layer further includes a secondsub-intermediate layer between the intermediate layer and the secondelectrode.
 45. The light emitting display device as claimed in claim 33,wherein the first electrodes includes a stack structure of an ITO layer,a silver (Ag) layer, and an ITO layer.
 46. The light emitting displaydevice as claimed in claim 33, wherein the second electrodes includes atleast one selected from magnesium (Mg), silver (Ag), lithium (Li),sodium (Na), calcium (Ca), and strontium (Sr).
 47. The light emittingdisplay device as claimed in claim 46 wherein the second electrodesincludes a silver-magnesium alloy having a greater content of silverthan a content of magnesium.
 48. The light emitting display device asclaimed in claim 33, wherein the conductive protection layers includesan oxide.
 49. The light emitting display device as claimed in claim 48,wherein the conductive protection layers includes at least one selectedfrom indium tin oxide (ITO), indium zinc oxide (IZO), tungsten Oxide(WOx), and molybdenum oxide (MoOx).
 50. The light emitting displaydevice as claimed in claim 33, wherein each of the intermediate layerincludes an organic light emission layer.